Manufacturing method for semiconductor device and electronic device

Manufacturing method for semiconductor device and electronic device

The invention provides a manufacturing method for a semiconductor device and an electronic device, and relates to the semiconductor technology field. In the manufacturing method for a semiconductor device, a step forming a metal silicide is before a step forming an interlayer dielectric layer, thus...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YANG YUN, ZOU LUJUN, LI SHAOBIN, QIU SHENGFEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YANG YUN
ZOU LUJUN
LI SHAOBIN
QIU SHENGFEN
description The invention provides a manufacturing method for a semiconductor device and an electronic device, and relates to the semiconductor technology field. In the manufacturing method for a semiconductor device, a step forming a metal silicide is before a step forming an interlayer dielectric layer, thus negative effects on the metal silicide caused by an annealing process during the process of forming an interlayer dielectric layer can be avoided, and therefore the performances and the yield rate of the semiconductor device can be raised. The provided electronic device employs the semiconductor device manufactured by the manufacturing method, and therefore the electronic device has the above advantages.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN105097954A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN105097954A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN105097954A3</originalsourceid><addsrcrecordid>eNrjZHD2TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKE7NzUzOz0spTS4B8lJSyzKTUxUS81IUUnNSk0uK8vMyk6GiPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3tnP0MDUwNLc0tTE0ZgYNQC6WDLw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method for semiconductor device and electronic device</title><source>esp@cenet</source><creator>YANG YUN ; ZOU LUJUN ; LI SHAOBIN ; QIU SHENGFEN</creator><creatorcontrib>YANG YUN ; ZOU LUJUN ; LI SHAOBIN ; QIU SHENGFEN</creatorcontrib><description>The invention provides a manufacturing method for a semiconductor device and an electronic device, and relates to the semiconductor technology field. In the manufacturing method for a semiconductor device, a step forming a metal silicide is before a step forming an interlayer dielectric layer, thus negative effects on the metal silicide caused by an annealing process during the process of forming an interlayer dielectric layer can be avoided, and therefore the performances and the yield rate of the semiconductor device can be raised. The provided electronic device employs the semiconductor device manufactured by the manufacturing method, and therefore the electronic device has the above advantages.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151125&amp;DB=EPODOC&amp;CC=CN&amp;NR=105097954A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151125&amp;DB=EPODOC&amp;CC=CN&amp;NR=105097954A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANG YUN</creatorcontrib><creatorcontrib>ZOU LUJUN</creatorcontrib><creatorcontrib>LI SHAOBIN</creatorcontrib><creatorcontrib>QIU SHENGFEN</creatorcontrib><title>Manufacturing method for semiconductor device and electronic device</title><description>The invention provides a manufacturing method for a semiconductor device and an electronic device, and relates to the semiconductor technology field. In the manufacturing method for a semiconductor device, a step forming a metal silicide is before a step forming an interlayer dielectric layer, thus negative effects on the metal silicide caused by an annealing process during the process of forming an interlayer dielectric layer can be avoided, and therefore the performances and the yield rate of the semiconductor device can be raised. The provided electronic device employs the semiconductor device manufactured by the manufacturing method, and therefore the electronic device has the above advantages.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD2TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKE7NzUzOz0spTS4B8lJSyzKTUxUS81IUUnNSk0uK8vMyk6GiPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3tnP0MDUwNLc0tTE0ZgYNQC6WDLw</recordid><startdate>20151125</startdate><enddate>20151125</enddate><creator>YANG YUN</creator><creator>ZOU LUJUN</creator><creator>LI SHAOBIN</creator><creator>QIU SHENGFEN</creator><scope>EVB</scope></search><sort><creationdate>20151125</creationdate><title>Manufacturing method for semiconductor device and electronic device</title><author>YANG YUN ; ZOU LUJUN ; LI SHAOBIN ; QIU SHENGFEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN105097954A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YANG YUN</creatorcontrib><creatorcontrib>ZOU LUJUN</creatorcontrib><creatorcontrib>LI SHAOBIN</creatorcontrib><creatorcontrib>QIU SHENGFEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANG YUN</au><au>ZOU LUJUN</au><au>LI SHAOBIN</au><au>QIU SHENGFEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method for semiconductor device and electronic device</title><date>2015-11-25</date><risdate>2015</risdate><abstract>The invention provides a manufacturing method for a semiconductor device and an electronic device, and relates to the semiconductor technology field. In the manufacturing method for a semiconductor device, a step forming a metal silicide is before a step forming an interlayer dielectric layer, thus negative effects on the metal silicide caused by an annealing process during the process of forming an interlayer dielectric layer can be avoided, and therefore the performances and the yield rate of the semiconductor device can be raised. The provided electronic device employs the semiconductor device manufactured by the manufacturing method, and therefore the electronic device has the above advantages.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_CN105097954A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Manufacturing method for semiconductor device and electronic device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T05%3A06%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YANG%20YUN&rft.date=2015-11-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN105097954A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true