Manufacturing method for semiconductor device and electronic device

The invention provides a manufacturing method for a semiconductor device and an electronic device, and relates to the semiconductor technology field. In the manufacturing method for a semiconductor device, a step forming a metal silicide is before a step forming an interlayer dielectric layer, thus negative effects on the metal silicide caused by an annealing process during the process of forming an interlayer dielectric layer can be avoided, and therefore the performances and the yield rate of the semiconductor device can be raised. The provided electronic device employs the semiconductor device manufactured by the manufacturing method, and therefore the electronic device has the above advantages.