Method for monitoring pre-cleaning technology of metal intermediate layer before wafer bonding

The invention provides a method for monitoring a pre-cleaning technology of a metal intermediate layer before wafer bonding. The method comprises that a wafer is provided, a metal film is grown at the surface of the wafer; a first reflectivity of the metal film is tested; the surface of the metal film is oxidized; the baked wafer, whose surface includes the grown metal film, is cleaned by a metal oxide corrosion solution; a second reflectivity of the metal film at the surface of the cleaned wafer is tested; and the first reflectivity is compared with the second reflectivity to easily determine whether the metal oxide at the surface of the metal film is completely removed. The method is simple and easy, related technology and device are relatively simple, the monitoring period is greatly shortened, and the instantaneity is higher; and at the same time, the metal film generated at the surface of the wafer is not damaged in the whole reflectivity testing process, the precision of test instrument is high, and the monitoring accuracy is greatly improved.