DSOI (Double Silicon Oxide Insulation) strain gage and manufacturing method thereof

The invention discloses a DSOI (Double Silicon Oxide Insulation) strain gage and a manufacturing method thereof. The gage comprises a substrate layer and a thin-film layer for components. The thin-film layer for components is arranged on the substrate layer; the thin-film layer for components and the substrate layer are separated by an insulation thin film layer. The thin-film layer for components comprises at least one resistor sensitive grating; each resistor sensitive grating is provided with at least two resistor bars that are in series connection; the bottom of the substrate layer is provided with an insulation film base which is in connection with the resistor sensitive grating(s). Such a structure reduces power leakage and enables a transducer to work at a wider temperature range; at the same time, as the insulation film base at the bottom of the substrate layer connects the gage as a whole, the positions of the resistor bars inside the resistor sensitive grating(s) are relatively stable, and consequently the misappropriate voltage across a whole circuit is reduced and the substrate layer and an elastic film are prevented from direct exposure to harmful materials contained in glass glue. In this manner, the insulation function and voltage withstanding function between a gage and an elastic film are improved.