Method for manufacturing semiconductor device

The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device comprises the steps of: providing a semiconductor substrate, wherein the semiconductor substrate is provided with an aluminum bonding pad, a passivation layer is formed on the surface of the semiconductor substrate, and the passivation layer has an opening for exposing the aluminum bonding pad; forming a sacrificial layer on a region of the passivation layer where a suspended micro-structure is pre-formed; forming a germanium-silicon layer for covering the sacrificial layer; patterning the germanium-silicon layer and removing the sacrificial layer to form the suspended micro-structure; and carrying out hydrophobic treatment on the aluminum bonding pad. According to the method of enabling the surface of the aluminum bonding pad to be hydrophobic, corrosion from hydrofluoric acid to the aluminum bonding pad is prevented efficiently, and the performance and the yield rate of the device are further improved.