Low-temperature film coating method using tetraethyl orthosilicate (TEOS) source

The invention discloses a low-temperature film coating method using a tetraethyl orthosilicate (TEOS) source, and provides a method with plasma enhanced chemical vapor deposition as a low-temperature deposition insulation layer mainly in order to meet the requirement that the deposition temperature of an insulation layer needs to be lower than 200 DEG C in the through-silicon-via (TSV) packaging production stage in the prior art. According to the method, a substrate is conveyed into a vacuum reaction cavity, a lower electrode precisely is controlled to be at a low temperature through a thermocouple; O2 and He are introduced when the cavity is in a vacuum state to reach a set pressure; after the gas is introduced for a certain period of time, heated vaporized TEOS gas is introduced to the cavity, and a radio-frequency power supply is turned on; and after the power supply reaches set radio-frequency power, plasmas are generated between electrodes, so that silicon oxide films start to deposit on the surface of the substrate. By means of the method, the silicon oxide films which are high in hole structure coverage and excellent in electric performance are prepared through the TEOS source so as to meet production requirements of the TSV field.