Method for reducing surface chromatic aberration of film silicon assembly

The invention relates to a method for reducing the surface chromatic aberration of a film silicon assembly, and belongs to the application field of the semiconductor film technology and building integrated photovoltaics (BIPV). The method achieves a purpose of charging the surface chromatic aberration of the film silicon assembly mainly through the processing of a front electrode, wherein the coating of a front electrode comprises the following steps: a, depositing a metal film, wherein the thickness of the metal film is greater than 0 nm and not greater than 10 nm; B, depositing a TCO film on the metal layer again through employing the technology of PVD, wherein the thickness of the TCO film is greater than 0 nm and not greater than 60 nm. Through the processing of the front electrode of a battery assembly, the method can improve the surface chromatic aberration remarkably, and the surface mean reflectivity of the surface of a processed sample is reduced. Moreover, the amplitude of interference fringes in a reflectivity spectrum is reduced, wherein the proportion is greatly improved when delta E is less than two, and can be greater than 80%. The method remarkably reduces the chromatic aberration, enables the chromatic aberration among sheets not to be apparent, and can be used for BIPV in a large-scale manner.