Vertical semiconductor device and method of manufacturing the vertical semiconductor device

Provided is a vertical semiconductor device, and a method of manufacturing the vertical semiconductor device, such that it is possible to obtain low on-state resistance, high avalanche withstand, high turn-off withstand, and high reverse recovery withstand. A vertical semiconductor device including...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TOSHIAKI SAKATA, YASUSHI NIIMURA
Format: Patent
Sprache:eng
Schlagworte:
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