Vertical semiconductor device and method of manufacturing the vertical semiconductor device

Provided is a vertical semiconductor device, and a method of manufacturing the vertical semiconductor device, such that it is possible to obtain low on-state resistance, high avalanche withstand, high turn-off withstand, and high reverse recovery withstand. A vertical semiconductor device including an element active portion and a voltage withstanding structure portion has a first main electrode and a gate pad electrode on a first main surface of the element active portion, includes first parallel pn layers in a drift layer below the first main electrode, and includes second parallel pn layers below the gate pad electrode. The vertical semiconductor device includes a first conductivity type isolation region between the second parallel pn layers below the gate pad electrode and a p-type well region disposed in a surface layer of the drift layer, and by the repetition pitch of the second parallel pn layers being shorter than the repetition pitch of the first parallel pn layers, it is possible to obtain low on-state resistance, high avalanche withstand, high turn-off withstand, and high reverse recovery withstand.