IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof

The invention discloses an IGBT (Insulated Gate Bipolar Translator) sub-module unit and a packaging module thereof, belongs to the technical field of semiconductor device packaging, and solves the technical problem that stray parameters of an auxiliary emitter electrode loop in a conventional crimping type IGBT packaging structure are not consistent. The IGBT sub-module unit comprises an IGBT chip, an emitter electrode molybdenum sheet, a collector electrode molybdenum sheet, a first conductive piece and a mounting base, wherein one surface of the emitter electrode molybdenum sheet is partially contacted with an emitter electrode of the IGBT chip; one surface of the collector electrode molybdenum sheet is contacted with a collector electrode of the IGBT chip; one end of the first conductive piece is contacted with the emitter electrode of the IGBT chip; and the mounting base is provided with a first hole for accommodating the emitter electrode molybdenum sheet and a second hole for allowing the first conductive piece to pass through, and the edge of the first hole of the mounting base is also provided with a clamp connection part.