Semiconductor device of inductance-capacitance resonance circuit

The invention discloses a semiconductor device of an inductance-capacitance resonance circuit, comprising a first insulation layer, an inductor assembly and a capacitor assembly; the inductor assembly comprises a coil line section and two extension line sections; the coil section and the extension sections are positioned on the same surface of a first insulation layer; the extension sections are respectively coupled on two ends of the coil sections; the extension sections are spaced from each other and extended outwardly relative to the coil sections; the extension sections and the coil section define a first area; and the capacitor assembly is arranged on the other surface of the inductor assembly opposite to the first insulation layer in a concealing manner by corresponding to the first area.