High-voltage backboard for crystal silicon element packaging

The invention relates to a high-voltage backboard for crystal silicon element packaging, and belongs to the photovoltaic packaging material field. The backboard is composed of a modified alkene inner layer, a polyester intermediate matrix layer and a crosslinking fluororesin weather-proof outer laye...

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Bibliographische Detailangaben
Hauptverfasser:	MU DANHUA, LIN JIANHUA, LIN WEIHONG, ZHOU GUANGDA, WANG BO, PENG RUIQUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	The invention relates to a high-voltage backboard for crystal silicon element packaging, and belongs to the photovoltaic packaging material field. The backboard is composed of a modified alkene inner layer, a polyester intermediate matrix layer and a crosslinking fluororesin weather-proof outer layer. The prepared backboard has a high local discharging voltage, has a good water vapor barrier property and has excellent mechanical strength and outdoor weatherability. The preparation technology is simple, product performances are stable, and the high-voltage backboard is an excellent photovoltaic backboard suitable for a large-scale system crystal silicon element.