Method for manufacturing semiconductor devices having a metallisation layer

Method for manufacturing semiconductor devices having a metallisation layer

The invention discloses a method for manufacturing semiconductor devices having a metallisation layer. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substra...

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Hauptverfasser: PAUL GANITZER, RUDOLF ZELSACHER
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PAUL GANITZER
RUDOLF ZELSACHER
description The invention discloses a method for manufacturing semiconductor devices having a metallisation layer. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.
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In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for manufacturing semiconductor devices having a metallisation layer
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