Method for manufacturing semiconductor devices having a metallisation layer
The invention discloses a method for manufacturing semiconductor devices having a metallisation layer. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substra...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention discloses a method for manufacturing semiconductor devices having a metallisation layer. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness. |
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