SILVER ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD FOR MANUFACTURING SAME

A silver alloy sputtering target having a component composition containing a total of 0.1 to 1.5% by mass of In and/or Sn, which are elements that form a solid solution in Ag, with the remainder being made up by Ag and unavoidable impurities, the average grain diameter of the crystal grains being 1...

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Bibliographische Detailangaben
Hauptverfasser: KOMIYAMA SHOZO, KOIKE SHINYA, FUNAKI SHINICHI, OKUDA SEI
Format: Patent
Sprache:eng
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Zusammenfassung:A silver alloy sputtering target having a component composition containing a total of 0.1 to 1.5% by mass of In and/or Sn, which are elements that form a solid solution in Ag, with the remainder being made up by Ag and unavoidable impurities, the average grain diameter of the crystal grains being 1 [mu]m to less than 30 [mu]m, and fluctuations in the grain diameter of the crystal grains being no greater than 30% of the average grain diameter. The silver alloy sputtering target is manufactured by subjecting a melt-cast ingot to a hot rolling step, a cooling step, cold rolling, heat processing, and a machining processing step, in the stated order.