Optical proximity effect correction method aiming at specific repeated patterns

The invention provides an optical proximity effect correction method aiming at specific repeated patterns. The method comprises the following steps: dividing a whole layout to be corrected into a specific repeated pattern area and a nonspecific repeated pattern area, wherein the specific repeated pa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHU JUN, LYU YUKUN, ZHANG XUSHENG, QI XUERUI, WEI FANG
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ZHU JUN
LYU YUKUN
ZHANG XUSHENG
QI XUERUI
WEI FANG
description The invention provides an optical proximity effect correction method aiming at specific repeated patterns. The method comprises the following steps: dividing a whole layout to be corrected into a specific repeated pattern area and a nonspecific repeated pattern area, wherein the specific repeated pattern area comprises repeated pattern basic units, and each repeated pattern basic unit comprises symmetric patterns and non-horizontal perpendicular edges; using a conventional optical proximity effect correction method to correct the nonspecific repeated pattern area to obtain a first correction result; using a limited optical proximity effect correction method to correct the specific repeated pattern area to obtain a second correction result; and finally splicing the first correction result and the second correction result together to obtain a pattern for manufacturing an optical cover.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104991415A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104991415A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104991415A3</originalsourceid><addsrcrecordid>eNqNyjEOwjAMRuEuDAi4gzkAEhFl6FhVICa6sFdW-gcstYmVeIDb04EDMH3De-uq79XE80Sa01tmsQ8hBHgjn3JelBRphr3SSLz0-CQ2KgovQTxlKNgwkrIZcizbahV4Ktj93FT76-XR3Q7QNKAoe0TY0N3dsW4aV7tze_rn-QKoejeM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Optical proximity effect correction method aiming at specific repeated patterns</title><source>esp@cenet</source><creator>ZHU JUN ; LYU YUKUN ; ZHANG XUSHENG ; QI XUERUI ; WEI FANG</creator><creatorcontrib>ZHU JUN ; LYU YUKUN ; ZHANG XUSHENG ; QI XUERUI ; WEI FANG</creatorcontrib><description>The invention provides an optical proximity effect correction method aiming at specific repeated patterns. The method comprises the following steps: dividing a whole layout to be corrected into a specific repeated pattern area and a nonspecific repeated pattern area, wherein the specific repeated pattern area comprises repeated pattern basic units, and each repeated pattern basic unit comprises symmetric patterns and non-horizontal perpendicular edges; using a conventional optical proximity effect correction method to correct the nonspecific repeated pattern area to obtain a first correction result; using a limited optical proximity effect correction method to correct the specific repeated pattern area to obtain a second correction result; and finally splicing the first correction result and the second correction result together to obtain a pattern for manufacturing an optical cover.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151021&amp;DB=EPODOC&amp;CC=CN&amp;NR=104991415A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20151021&amp;DB=EPODOC&amp;CC=CN&amp;NR=104991415A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHU JUN</creatorcontrib><creatorcontrib>LYU YUKUN</creatorcontrib><creatorcontrib>ZHANG XUSHENG</creatorcontrib><creatorcontrib>QI XUERUI</creatorcontrib><creatorcontrib>WEI FANG</creatorcontrib><title>Optical proximity effect correction method aiming at specific repeated patterns</title><description>The invention provides an optical proximity effect correction method aiming at specific repeated patterns. The method comprises the following steps: dividing a whole layout to be corrected into a specific repeated pattern area and a nonspecific repeated pattern area, wherein the specific repeated pattern area comprises repeated pattern basic units, and each repeated pattern basic unit comprises symmetric patterns and non-horizontal perpendicular edges; using a conventional optical proximity effect correction method to correct the nonspecific repeated pattern area to obtain a first correction result; using a limited optical proximity effect correction method to correct the specific repeated pattern area to obtain a second correction result; and finally splicing the first correction result and the second correction result together to obtain a pattern for manufacturing an optical cover.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAMRuEuDAi4gzkAEhFl6FhVICa6sFdW-gcstYmVeIDb04EDMH3De-uq79XE80Sa01tmsQ8hBHgjn3JelBRphr3SSLz0-CQ2KgovQTxlKNgwkrIZcizbahV4Ktj93FT76-XR3Q7QNKAoe0TY0N3dsW4aV7tze_rn-QKoejeM</recordid><startdate>20151021</startdate><enddate>20151021</enddate><creator>ZHU JUN</creator><creator>LYU YUKUN</creator><creator>ZHANG XUSHENG</creator><creator>QI XUERUI</creator><creator>WEI FANG</creator><scope>EVB</scope></search><sort><creationdate>20151021</creationdate><title>Optical proximity effect correction method aiming at specific repeated patterns</title><author>ZHU JUN ; LYU YUKUN ; ZHANG XUSHENG ; QI XUERUI ; WEI FANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104991415A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHU JUN</creatorcontrib><creatorcontrib>LYU YUKUN</creatorcontrib><creatorcontrib>ZHANG XUSHENG</creatorcontrib><creatorcontrib>QI XUERUI</creatorcontrib><creatorcontrib>WEI FANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHU JUN</au><au>LYU YUKUN</au><au>ZHANG XUSHENG</au><au>QI XUERUI</au><au>WEI FANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Optical proximity effect correction method aiming at specific repeated patterns</title><date>2015-10-21</date><risdate>2015</risdate><abstract>The invention provides an optical proximity effect correction method aiming at specific repeated patterns. The method comprises the following steps: dividing a whole layout to be corrected into a specific repeated pattern area and a nonspecific repeated pattern area, wherein the specific repeated pattern area comprises repeated pattern basic units, and each repeated pattern basic unit comprises symmetric patterns and non-horizontal perpendicular edges; using a conventional optical proximity effect correction method to correct the nonspecific repeated pattern area to obtain a first correction result; using a limited optical proximity effect correction method to correct the specific repeated pattern area to obtain a second correction result; and finally splicing the first correction result and the second correction result together to obtain a pattern for manufacturing an optical cover.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_CN104991415A
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title Optical proximity effect correction method aiming at specific repeated patterns
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T02%3A03%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHU%20JUN&rft.date=2015-10-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104991415A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true