Semiconductor device and manufacture method thereof

The invention discloses a semiconductor device and a manufacture method thereof. The semiconductor device comprises a semiconductor layer having a first conduction type; a plurality of first doped regions arranged in a part of the semiconductor layer in parallel and separately along a first direction, wherein the first doped regions each have a second conduction type opposite to the first conduction type and a rectangle shape; a gate structure arranged on a part of the semiconductor layer along a second direction and covering a part of the doped regions; a second doped region arranged in the semiconductor layer along the second direction and adjacent to a first side of the gate structure and having the second conduction type; and a third doped region arranged in the semiconductor layer of a second side opposite to the first side of the gate structure along the second direction and adjacent to the doped regions and having the second conduction type. Through the semiconductor device and the manufacture method thereof, expression of components in the semiconductor device can still be maintained even under the condition of dimension miniature of a high-voltage metal oxide semiconductor field effect transistor in a semiconductor device.