Methods and apparatus for depositing metal layer on semiconductor device
The invention provides a method and an apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage, wherein the semiconductor components are arranged in a matrix-like pattern. The method comprises: a) providing a wafer having compon...
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creator | SPANG, MATTHIAS SCHULZ, WOLFGANG-MICHAEL |
description | The invention provides a method and an apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage, wherein the semiconductor components are arranged in a matrix-like pattern. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components. |
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The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.</description><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151014&DB=EPODOC&CC=CN&NR=104979182A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151014&DB=EPODOC&CC=CN&NR=104979182A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SPANG, MATTHIAS</creatorcontrib><creatorcontrib>SCHULZ, WOLFGANG-MICHAEL</creatorcontrib><title>Methods and apparatus for depositing metal layer on semiconductor device</title><description>The invention provides a method and an apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage, wherein the semiconductor components are arranged in a matrix-like pattern. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDwTS3JyE8pVkjMS1FILChILEosKS1WSMsvUkhJLcgvzizJzEtXyE0tScxRyEmsTC1SyM9TKE7NzUzOz0spTS4BqyvLTE7lYWBNS8wpTuWF0twMim6uIc4eukBT4lOLCxKTU_NSS-Kd_QwNTCzNLQ0tjByNiVEDAMmqNLI</recordid><startdate>20151014</startdate><enddate>20151014</enddate><creator>SPANG, MATTHIAS</creator><creator>SCHULZ, WOLFGANG-MICHAEL</creator><scope>EVB</scope></search><sort><creationdate>20151014</creationdate><title>Methods and apparatus for depositing metal layer on semiconductor device</title><author>SPANG, MATTHIAS ; SCHULZ, WOLFGANG-MICHAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104979182A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SPANG, MATTHIAS</creatorcontrib><creatorcontrib>SCHULZ, WOLFGANG-MICHAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SPANG, MATTHIAS</au><au>SCHULZ, WOLFGANG-MICHAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods and apparatus for depositing metal layer on semiconductor device</title><date>2015-10-14</date><risdate>2015</risdate><abstract>The invention provides a method and an apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage, wherein the semiconductor components are arranged in a matrix-like pattern. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
title | Methods and apparatus for depositing metal layer on semiconductor device |
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