Methods and apparatus for depositing metal layer on semiconductor device

The invention provides a method and an apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage, wherein the semiconductor components are arranged in a matrix-like pattern. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.