Semiconductor device
In order to prevent a crack from occurring from an impact in an interlayer insulation film below a bonding pad, provided is a bonding pad wherein small-diameter metal plugs (14a) and large-diameter metal plugs (14b) are positioned between a first metal film (12) and a second metal film (15) which is...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | In order to prevent a crack from occurring from an impact in an interlayer insulation film below a bonding pad, provided is a bonding pad wherein small-diameter metal plugs (14a) and large-diameter metal plugs (14b) are positioned between a first metal film (12) and a second metal film (15) which is a topmost layer, and depression parts (17) are disposed in the surface of the second metal film (15) above the large-diameter metal plugs (14b). |
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