Semiconductor device

In order to prevent a crack from occurring from an impact in an interlayer insulation film below a bonding pad, provided is a bonding pad wherein small-diameter metal plugs (14a) and large-diameter metal plugs (14b) are positioned between a first metal film (12) and a second metal film (15) which is...

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Bibliographische Detailangaben
1. Verfasser: YAMAMOTO SUKEHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:In order to prevent a crack from occurring from an impact in an interlayer insulation film below a bonding pad, provided is a bonding pad wherein small-diameter metal plugs (14a) and large-diameter metal plugs (14b) are positioned between a first metal film (12) and a second metal film (15) which is a topmost layer, and depression parts (17) are disposed in the surface of the second metal film (15) above the large-diameter metal plugs (14b).