Light emitting device

Provided is a light emitting device. In one embodiment, the light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and an anti-current leakage layer between the active layer and the second conductive type semiconductor layer. The first conductive type semiconductor layer includes a plurality of grooves. The active layer is formed along the groves. A surface of the anti-current leakage layer adjacent to the second conductive type semiconductor layer is flat.