SEMICONDUCTOR OPTICAL DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE

This semiconductor optical device has: a semiconductor laminated chip that has a first conductivity-type first semiconductor layer having a first surface, a second conductivity-type second semiconductor layer having a second surface, said second conductivity type being opposite to the first conductivity type, and an active layer that is sandwiched between the first semiconductor layer and the second semiconductor layer, said chip having a side surface that includes a first side surface, which is continuous to the second surface, forms an obtuse angle with the second surface, traverses the second semiconductor layer and the active layer, and enters the first semiconductor layer, and a divided surface continuous to the first side surface; a first conductivity-type side electrode that is formed on the first surface; and a second conductivity-type side electrode that is formed on the second surface. The in-plane dimension of the semiconductor laminated layer is 50 [mu]m or less.