Trench type IGBT (insulated gate bipolar transistor) chip

The invention relates to a trench type IGBT (insulated gate bipolar transistor) chip and belongs to the field of manufacturing of semi-conductor devices. The trench type IGBT chip comprises a P type injection zone (9) as well as an N type buffer zone (8), an N type drift zone (7) and a P-body type zone (5) which are located above the P type injection zone (9), wherein trenches (11) are formed in the P-body type zone (5) at an interval, and N+ type zones (4) are formed on two sides of the trenches (11). The trench type IGBT chip is characterized in that the depth of each trench (11) is smaller than the thickness of the P-body type zone (5), and the trenches (11) are located in the P-body type zone (5) as a whole. According to the IGBT chip, the trenches (11) formed in the P-body type zone are located in the P-body type zone completely, so that Miller capacitance between a grid G and a collector C is eliminated to the greatest extent, the Miller capacitance charge process is avoided in the whole connection process, connection and disconnection loss of the chip is greatly reduced, the on-off efficiency of a device is improved, and the chip is particularly applicable to high-frequency IGBT application occasions.