Manufacturing method for semiconductor device

The invention provides a manufacturing method for a semiconductor device. The manufacturing method comprises the following steps: providing a semiconductor substrate with a core region and a non-core region, and forming a pseudo-gate structure on the semiconductor substrate; forming a first embedded epitaxial layer in a part going to form a source/drain region in the core region, and forming a first cap layer at the top of the first embedded epitaxial layer; forming a second embedded epitaxial layer in a part going to form a source/drain region in the non-core region, and forming a second cap layer as thick as the first cap layer at the top of the second embedded epitaxial layer by taking the thickness of the first cap layer as a reference. According to the manufacturing method provided by the invention, the embedded epitaxial layers with the uniform height can be formed in the parts going to form the source/drain regions in the core region and the non-core region.