Preparation method of graphene-boron nitride heterojunction

The invention provides a preparation method of a graphene-boron nitride heterojunction. The method includes the steps of: S1. adhering graphene to a heat release adhesive tape; S2. attaching the heat release adhesive tape side adhered with the graphene to boron nitride; and S3. conducting heating to make the heat release adhesive tape lose viscosity, and then peeling off the heat release adhesive tape to obtain the graphene-boron nitride heterojunction. The method provided by the invention utilizes continuous transfer of the heat release adhesive tape to obtain grapheme/boron nitride with dry and clean upper and lower surfaces. The transfer method has simple conditions, is low in cost, has good repeatability, is environment friendly, and successfully avoids metal ions and chemical groups introduced by corrosion of metal growth substrate in a wet transfer process, also avoids damage of graphene and boron nitride surface appearance, and further avoids the possibility of incomplete removal of residual adhesive. The high quality graphene-boron nitride heterojunction lays a good foundation for later stage preparation of graphene electronic devices.