High-voltage thyristor and designing process thereof

The invention discloses a high-voltage thyristor and a designing process thereof, wherein the designing process comprises the following steps: S1, supplying a to-be-diffused aluminum source with a concentration of 6*10 cm to 9*10 cm, adding the aluminum source into SiO2 latex, in 80-90 hours, making the aluminum source perform first diffusion on an N-type substrate in a SiO2 latex diffusion manner; and S2, based on the first diffusion, supplying a to-be-diffused boron source with a concentration of 2.5*10 cm to 3*10 cm, adding the boron source into the SiO2 latex, in 8-10 hours, making the boron source perform second diffusion on a P-type layer which is formed in the first diffusion in a SiO2 latex diffusion manner. The thyristor which is manufactured through the designing process has advantages of high blocking voltage and high reliability. Furthermore the size of a device for serially connecting a plurality of thyristors is effectively reduced.