Semiconductor device, manufacturing method thereof, and manufacturing apparatus thereof

The invention provides a semiconductor device capable of preventing characteristic change of an oxide semiconductor and having smaller parasitic capacitance, the manufacturing method thereof, and the manufacturing apparatus thereof. In a laminated TFT (10) formed by laminating a gate electrode (12),...

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Bibliographische Detailangaben

Hauptverfasser:	SATOYOSHI TSUTOMU, MAMORU HURUTA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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