Semiconductor device, manufacturing method thereof, and manufacturing apparatus thereof

The invention provides a semiconductor device capable of preventing characteristic change of an oxide semiconductor and having smaller parasitic capacitance, the manufacturing method thereof, and the manufacturing apparatus thereof. In a laminated TFT (10) formed by laminating a gate electrode (12), an IGZO film (40) and a trench protective film (17) from bottom to top, a photoresist mask (41a) representing the width of the gate electrode serves as a mask to partially remove the trench protective film, so that the IGZO film is partially exposed. The exposed portion of the IGZO film and the residual portion of the trench protective film are placed in a plasma formed by mixed processing gas of silicon fluoride gas and nitrogen, and the mixed gas is free of hydrogen. The exposed portion of the IGZO film and the residual portion of the trench protective film are covered with a passivation film (18) formed by a silicon nitride film containing fluorine. During the passivation film is formed, fluorine atoms dispersed from the passivation film to the exposed portion of the IGZO film to form a source area (15) and a drain area (16).