METHOD FOR CONTINUOUS PROCESSING OF SEMICONDUCTOR WAFER

The present invention relates to a reflow method for a semiconductor wafer, in which an apparatus, provided with a plurality of chambers and an outer body surrounding the exterior thereof, processes a wafer, the plurality of chambers comprising 1-5 chambers, and the method for continuous processing of a wafer comprising: a first step of injecting an inactive gas into a first chamber after loading a wafer therein and purging; a second step of transporting the wafer, for which the first step has been completed, to a second chamber, and then heating the wafer after injecting a process gas into the interior thereof; a third step of transporting the wafer, for which the second step has been completed, to a third chamber, and heating the wafer after injecting a process gas into the interior thereof; a forth step of transporting the wafer, for which the third step has been completed, to a forth chamber, and heating the wafer under the internal pressure below the atmospheric pressure; a fifth step of transporting the wafer, for which the fourth step has been completed, to a fifth chamber, and heating the wafer after injecting a process gas thereinfo; and a sixth step of transporting the wafer, for which the fifth step has been completed, to the first chamber and unloading the wafer to the outside after cooling, and loading a different wafer in the first chamber. The present invention simplifies the processing steps so as to allow reducing the number of stations in the reflow apparatus, thereby enhancing productivity by reducing the processing time, allowing the size of the reflow apparatus to be smaller and expenses to be reduced.