Gas barrier film

The purpose of the present invention is to provide a gas barrier film which has high gas barrier properties and excellent bending resistance. The gas barrier film of the present invention sequentially has, on at least one surface of a polymer base, an inorganic layer (A) and a silicon compound layer...

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Bibliographische Detailangaben
Hauptverfasser:	UEBAYASHI HIROYUKI, MORI KENTARO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	The purpose of the present invention is to provide a gas barrier film which has high gas barrier properties and excellent bending resistance. The gas barrier film of the present invention sequentially has, on at least one surface of a polymer base, an inorganic layer (A) and a silicon compound layer (B) in this order from the polymer base side. This gas barrier film is characterized in that: the inorganic layer (A) contains a zinc compound and silicon oxide; the silicon compound layer (B) contains silicon oxynitride; and the inorganic layer (A) and the silicon compound layer (B) are in contact with each other.