SEMICONDUCTOR DEVICE

The invention provides a semiconductor device enhancing destroy tolerance. The semiconductor device according to embodiments includes a semiconductor substrate; first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, an...

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Bibliographische Detailangaben
1. Verfasser: KAMATA SHUJI
Format: Patent
Sprache:eng
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Zusammenfassung:The invention provides a semiconductor device enhancing destroy tolerance. The semiconductor device according to embodiments includes a semiconductor substrate; first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer; second semiconductor layers of the first conductive type provided between the first semiconductor layers; a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer; a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate; a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate; a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer, and the first semiconductor layer, the second semiconductor layer and the third semiconductor layer; an emitter electrode electrically connected between the fourth semiconductor layer and the fifth semiconductor layer; and a collector electrode electrically connected to the sixth semiconductor layer.