Method for manufacturing transistor T-shaped gate

The present invention provides a method for manufacturing a high electron mobility transistor T-shaped gate used for a microwave and millimeter wave integrated circuit. One characteristic of the method is to form the structure of the T-shaped gate by two times of defocusing, thereby enhancing the me...

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Bibliographische Detailangaben
Hauptverfasser:	YANG GUANG YU, I-SHIANG SHIH, CHUNONG QIU, YII SHIH, ANDY SHIH, CINDY XING QIU, HAN LU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for manufacturing a high electron mobility transistor T-shaped gate used for a microwave and millimeter wave integrated circuit. One characteristic of the method is to form the structure of the T-shaped gate by two times of defocusing, thereby enhancing the mechanical strength and reliability of the T-shaped gate. The second characteristic of the method is that a miniaturization step and a thermal deformation step are adopted during the manufacture process, thereby reducing the size of a root cavity of the T-shaped gate, and manufacturing the T-shaped gate having a smaller gate length.