Method for producing semi-conductor laser elements and semi-conductor laser element
In at least one embodiment, the method for producing semi-conductor laser elements (1) involves the following steps: (A) producing a substrate composite (20) with a plurality of substrates (2) for the semi-conductor laser elements (1); (B) producing a laser bar (30) with a plurality of semi-conducto...
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| creator | LISTL STEFAN ENZMANN ROLAND HORN MARKUS DACHS JURGEN VEIT THOMAS ARZBERGER MARKUS GRAUL MARKUS |
| description | In at least one embodiment, the method for producing semi-conductor laser elements (1) involves the following steps: (A) producing a substrate composite (20) with a plurality of substrates (2) for the semi-conductor laser elements (1); (B) producing a laser bar (30) with a plurality of semi-conductor laser diodes (3) that have a common growth substrate (31) and a semi-conductor layer sequence (32) which has grown thereon; (C) generating desired breaking points (35) on a substrate underside (34) of the growth substrate (31), which substrate underside faces away from the semi-conductor layer sequence (32); (D) applying a laser bar (30) on a substrate upper side (23) of the substrate composite (20), which is performed at a higher temperature and which is followed by cooling; and (E) separation into the semi-conductor laser elements (1), steps (B) to (E) being performed in the indicated sequence. |
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(B) producing a laser bar (30) with a plurality of semi-conductor laser diodes (3) that have a common growth substrate (31) and a semi-conductor layer sequence (32) which has grown thereon; (C) generating desired breaking points (35) on a substrate underside (34) of the growth substrate (31), which substrate underside faces away from the semi-conductor layer sequence (32); (D) applying a laser bar (30) on a substrate upper side (23) of the substrate composite (20), which is performed at a higher temperature and which is followed by cooling; and (E) separation into the semi-conductor laser elements (1), steps (B) to (E) being performed in the indicated sequence.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150826&DB=EPODOC&CC=CN&NR=104871378A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150826&DB=EPODOC&CC=CN&NR=104871378A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LISTL STEFAN</creatorcontrib><creatorcontrib>ENZMANN ROLAND</creatorcontrib><creatorcontrib>HORN MARKUS</creatorcontrib><creatorcontrib>DACHS JURGEN</creatorcontrib><creatorcontrib>VEIT THOMAS</creatorcontrib><creatorcontrib>ARZBERGER MARKUS</creatorcontrib><creatorcontrib>GRAUL MARKUS</creatorcontrib><title>Method for producing semi-conductor laser elements and semi-conductor laser element</title><description>In at least one embodiment, the method for producing semi-conductor laser elements (1) involves the following steps: (A) producing a substrate composite (20) with a plurality of substrates (2) for the semi-conductor laser elements (1); (B) producing a laser bar (30) with a plurality of semi-conductor laser diodes (3) that have a common growth substrate (31) and a semi-conductor layer sequence (32) which has grown thereon; (C) generating desired breaking points (35) on a substrate underside (34) of the growth substrate (31), which substrate underside faces away from the semi-conductor layer sequence (32); (D) applying a laser bar (30) on a substrate upper side (23) of the substrate composite (20), which is performed at a higher temperature and which is followed by cooling; and (E) separation into the semi-conductor laser elements (1), steps (B) to (E) being performed in the indicated sequence.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj2TS3JyE9RSMsvUigoyk8pTc7MS1coTs3N1E3OzwNyS4ASOYnFqUUKqTmpual5JcUKiXkpeFXwMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DAxMLc0NjcwtHY2LUAACGBjjb</recordid><startdate>20150826</startdate><enddate>20150826</enddate><creator>LISTL STEFAN</creator><creator>ENZMANN ROLAND</creator><creator>HORN MARKUS</creator><creator>DACHS JURGEN</creator><creator>VEIT THOMAS</creator><creator>ARZBERGER MARKUS</creator><creator>GRAUL MARKUS</creator><scope>EVB</scope></search><sort><creationdate>20150826</creationdate><title>Method for producing semi-conductor laser elements and semi-conductor laser element</title><author>LISTL STEFAN ; ENZMANN ROLAND ; HORN MARKUS ; DACHS JURGEN ; VEIT THOMAS ; ARZBERGER MARKUS ; GRAUL MARKUS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104871378A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>LISTL STEFAN</creatorcontrib><creatorcontrib>ENZMANN ROLAND</creatorcontrib><creatorcontrib>HORN MARKUS</creatorcontrib><creatorcontrib>DACHS JURGEN</creatorcontrib><creatorcontrib>VEIT THOMAS</creatorcontrib><creatorcontrib>ARZBERGER MARKUS</creatorcontrib><creatorcontrib>GRAUL MARKUS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LISTL STEFAN</au><au>ENZMANN ROLAND</au><au>HORN MARKUS</au><au>DACHS JURGEN</au><au>VEIT THOMAS</au><au>ARZBERGER MARKUS</au><au>GRAUL MARKUS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for producing semi-conductor laser elements and semi-conductor laser element</title><date>2015-08-26</date><risdate>2015</risdate><abstract>In at least one embodiment, the method for producing semi-conductor laser elements (1) involves the following steps: (A) producing a substrate composite (20) with a plurality of substrates (2) for the semi-conductor laser elements (1); (B) producing a laser bar (30) with a plurality of semi-conductor laser diodes (3) that have a common growth substrate (31) and a semi-conductor layer sequence (32) which has grown thereon; (C) generating desired breaking points (35) on a substrate underside (34) of the growth substrate (31), which substrate underside faces away from the semi-conductor layer sequence (32); (D) applying a laser bar (30) on a substrate upper side (23) of the substrate composite (20), which is performed at a higher temperature and which is followed by cooling; and (E) separation into the semi-conductor laser elements (1), steps (B) to (E) being performed in the indicated sequence.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
| title | Method for producing semi-conductor laser elements and semi-conductor laser element |
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