Method for producing semi-conductor laser elements and semi-conductor laser element

In at least one embodiment, the method for producing semi-conductor laser elements (1) involves the following steps: (A) producing a substrate composite (20) with a plurality of substrates (2) for the semi-conductor laser elements (1); (B) producing a laser bar (30) with a plurality of semi-conducto...

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Bibliographische Detailangaben
Hauptverfasser: LISTL STEFAN, ENZMANN ROLAND, HORN MARKUS, DACHS JURGEN, VEIT THOMAS, ARZBERGER MARKUS, GRAUL MARKUS
Format: Patent
Sprache:eng
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Zusammenfassung:In at least one embodiment, the method for producing semi-conductor laser elements (1) involves the following steps: (A) producing a substrate composite (20) with a plurality of substrates (2) for the semi-conductor laser elements (1); (B) producing a laser bar (30) with a plurality of semi-conductor laser diodes (3) that have a common growth substrate (31) and a semi-conductor layer sequence (32) which has grown thereon; (C) generating desired breaking points (35) on a substrate underside (34) of the growth substrate (31), which substrate underside faces away from the semi-conductor layer sequence (32); (D) applying a laser bar (30) on a substrate upper side (23) of the substrate composite (20), which is performed at a higher temperature and which is followed by cooling; and (E) separation into the semi-conductor laser elements (1), steps (B) to (E) being performed in the indicated sequence.