Graphene field effect transistor

The invention provides a method for manufacturing a semiconductor structure (5), which includes: forming a seed material (25) on a sidewall of a mandrel (20a, 20b); forming a graphene field effect transistor (FET) (30) on the seed material (25); and removing the seed material (25).

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Bibliographische Detailangaben
Hauptverfasser:	LEITCH MOLLY J, ADKISSON JAMES W, GAMBINO JEFFREY P, DUNBAR THOMAS J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention provides a method for manufacturing a semiconductor structure (5), which includes: forming a seed material (25) on a sidewall of a mandrel (20a, 20b); forming a graphene field effect transistor (FET) (30) on the seed material (25); and removing the seed material (25).