Semiconductor Device, Method for Manufacturing the Same and IGBT with Emitter Electrode Electrically Connected with Impurity Zone

The present invention provides a semiconductor Device, Method for Manufacturing the Same and IGBT with Emitter Electrode Electrically Connected with Impurity Zone. The semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary conductivity type configured to inject charge carriers into the drift zone, and an emitter electrode. The emitter electrode includes a metal silicide layer in direct ohmic contact with the emitter region. A net impurity concentration in a portion of the emitter region directly adjoining the metal silicide layer is at most 11017 cm-3.