Power semiconductor module

To provide a power semiconductor module that can efficiently cool a high-heat-generating portion of a transistor device and has excellent connection reliability of a wiring bonding portion. A power semiconductor module includes: a heat sink (1); a circuit board connected to the heat sink (1) via a bonding material and formed with a wiring on a front surface of an insulating substrate (2); a transistor device (5) including a main electrode (6) and a control electrode (7) formed on one surface and a back surface electrode formed on the other surface, the back surface electrode being connected to the circuit board via a bonding material; a first conductive member (10) bonded to the main electrode (6) via a bonding material; and wire or ribbon-shaped connection terminals (11) and (12) that electrically connect the first conductive member (10) and the control electrode (7) with another device or the circuit board, wherein the control electrode (7) is disposed at a corner portion of the main electrode (6), and the first conductive member (10) has a shape in which the first conductive member is cut out at a portion above the control electrode (7).