Semiconductor device and wire bonding wiring method

In the present invention, a first bond section is formed on a first electrode, and with respect to a wire (6) wired from the first bond section, a second bond section (62) is formed by pressing an leading end of a capillary (C) to a bump (B) formed on a second electrode, said second bond section having a shape of a pressing surface (S1) of the leading end of the capillary (C) transferred thereto. A base end (P1) of the second bond section (62), said base end being an end where the wire (6) starts to be thinner, is brought further toward the bump (B) side from one end (P21) by 10 % or more with respect to the length of a bonding surface (S2), and the wire (6) is cut by means of the capillary (C).