Method for preparing monosilane using trialkoxysilane
The present invention relates to a method for preparing a monosilane, and more specifically, to a method for economically preparing a monosilane, which is useful for a composition of a thin semiconductor structure and a multipurpose high-purity polycrystalline silicon, by preparing a monosilane in h...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KHATAM ASHUROV RUSTAM ASHUROV KIM YONG-IL KIM DEOK-YUN KIM KYUNG-YEOL SHAVKAT SALIKHOV VLADIMIR ROTSHTEYN SULTAN AZIZOV ILYOS ABDISAIDOV KIM TAEK-JOONG KHEKAYAT ASHUROVA AZIZ KURBANOV |
| description | The present invention relates to a method for preparing a monosilane, and more specifically, to a method for economically preparing a monosilane, which is useful for a composition of a thin semiconductor structure and a multipurpose high-purity polycrystalline silicon, by preparing a monosilane in high purity and yield using a trialkoxysilane. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104797527A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104797527A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104797527A3</originalsourceid><addsrcrecordid>eNrjZDD1TS3JyE9RSMsvUigoSi1ILMrMS1fIzc_LL87MScxLVSgtBgmUFGUm5mTnV1RCRHkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBibmluamRuaMxMWoAtQIt_g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for preparing monosilane using trialkoxysilane</title><source>esp@cenet</source><creator>KHATAM ASHUROV ; RUSTAM ASHUROV ; KIM YONG-IL ; KIM DEOK-YUN ; KIM KYUNG-YEOL ; SHAVKAT SALIKHOV ; VLADIMIR ROTSHTEYN ; SULTAN AZIZOV ; ILYOS ABDISAIDOV ; KIM TAEK-JOONG ; KHEKAYAT ASHUROVA ; AZIZ KURBANOV</creator><creatorcontrib>KHATAM ASHUROV ; RUSTAM ASHUROV ; KIM YONG-IL ; KIM DEOK-YUN ; KIM KYUNG-YEOL ; SHAVKAT SALIKHOV ; VLADIMIR ROTSHTEYN ; SULTAN AZIZOV ; ILYOS ABDISAIDOV ; KIM TAEK-JOONG ; KHEKAYAT ASHUROVA ; AZIZ KURBANOV</creatorcontrib><description>The present invention relates to a method for preparing a monosilane, and more specifically, to a method for economically preparing a monosilane, which is useful for a composition of a thin semiconductor structure and a multipurpose high-purity polycrystalline silicon, by preparing a monosilane in high purity and yield using a trialkoxysilane.</description><language>eng</language><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; CHEMISTRY ; COMPOUNDS THEREOF ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; THEIR RELEVANT APPARATUS ; TRANSPORTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150722&DB=EPODOC&CC=CN&NR=104797527A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150722&DB=EPODOC&CC=CN&NR=104797527A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHATAM ASHUROV</creatorcontrib><creatorcontrib>RUSTAM ASHUROV</creatorcontrib><creatorcontrib>KIM YONG-IL</creatorcontrib><creatorcontrib>KIM DEOK-YUN</creatorcontrib><creatorcontrib>KIM KYUNG-YEOL</creatorcontrib><creatorcontrib>SHAVKAT SALIKHOV</creatorcontrib><creatorcontrib>VLADIMIR ROTSHTEYN</creatorcontrib><creatorcontrib>SULTAN AZIZOV</creatorcontrib><creatorcontrib>ILYOS ABDISAIDOV</creatorcontrib><creatorcontrib>KIM TAEK-JOONG</creatorcontrib><creatorcontrib>KHEKAYAT ASHUROVA</creatorcontrib><creatorcontrib>AZIZ KURBANOV</creatorcontrib><title>Method for preparing monosilane using trialkoxysilane</title><description>The present invention relates to a method for preparing a monosilane, and more specifically, to a method for economically preparing a monosilane, which is useful for a composition of a thin semiconductor structure and a multipurpose high-purity polycrystalline silicon, by preparing a monosilane in high purity and yield using a trialkoxysilane.</description><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>THEIR RELEVANT APPARATUS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1TS3JyE9RSMsvUigoSi1ILMrMS1fIzc_LL87MScxLVSgtBgmUFGUm5mTnV1RCRHkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBibmluamRuaMxMWoAtQIt_g</recordid><startdate>20150722</startdate><enddate>20150722</enddate><creator>KHATAM ASHUROV</creator><creator>RUSTAM ASHUROV</creator><creator>KIM YONG-IL</creator><creator>KIM DEOK-YUN</creator><creator>KIM KYUNG-YEOL</creator><creator>SHAVKAT SALIKHOV</creator><creator>VLADIMIR ROTSHTEYN</creator><creator>SULTAN AZIZOV</creator><creator>ILYOS ABDISAIDOV</creator><creator>KIM TAEK-JOONG</creator><creator>KHEKAYAT ASHUROVA</creator><creator>AZIZ KURBANOV</creator><scope>EVB</scope></search><sort><creationdate>20150722</creationdate><title>Method for preparing monosilane using trialkoxysilane</title><author>KHATAM ASHUROV ; RUSTAM ASHUROV ; KIM YONG-IL ; KIM DEOK-YUN ; KIM KYUNG-YEOL ; SHAVKAT SALIKHOV ; VLADIMIR ROTSHTEYN ; SULTAN AZIZOV ; ILYOS ABDISAIDOV ; KIM TAEK-JOONG ; KHEKAYAT ASHUROVA ; AZIZ KURBANOV</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104797527A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>THEIR RELEVANT APPARATUS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KHATAM ASHUROV</creatorcontrib><creatorcontrib>RUSTAM ASHUROV</creatorcontrib><creatorcontrib>KIM YONG-IL</creatorcontrib><creatorcontrib>KIM DEOK-YUN</creatorcontrib><creatorcontrib>KIM KYUNG-YEOL</creatorcontrib><creatorcontrib>SHAVKAT SALIKHOV</creatorcontrib><creatorcontrib>VLADIMIR ROTSHTEYN</creatorcontrib><creatorcontrib>SULTAN AZIZOV</creatorcontrib><creatorcontrib>ILYOS ABDISAIDOV</creatorcontrib><creatorcontrib>KIM TAEK-JOONG</creatorcontrib><creatorcontrib>KHEKAYAT ASHUROVA</creatorcontrib><creatorcontrib>AZIZ KURBANOV</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KHATAM ASHUROV</au><au>RUSTAM ASHUROV</au><au>KIM YONG-IL</au><au>KIM DEOK-YUN</au><au>KIM KYUNG-YEOL</au><au>SHAVKAT SALIKHOV</au><au>VLADIMIR ROTSHTEYN</au><au>SULTAN AZIZOV</au><au>ILYOS ABDISAIDOV</au><au>KIM TAEK-JOONG</au><au>KHEKAYAT ASHUROVA</au><au>AZIZ KURBANOV</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for preparing monosilane using trialkoxysilane</title><date>2015-07-22</date><risdate>2015</risdate><abstract>The present invention relates to a method for preparing a monosilane, and more specifically, to a method for economically preparing a monosilane, which is useful for a composition of a thin semiconductor structure and a multipurpose high-purity polycrystalline silicon, by preparing a monosilane in high purity and yield using a trialkoxysilane.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_CN104797527A |
| source | esp@cenet |
| subjects | CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL THEIR RELEVANT APPARATUS TRANSPORTING |
| title | Method for preparing monosilane using trialkoxysilane |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T08%3A20%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KHATAM%20ASHUROV&rft.date=2015-07-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104797527A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |