Semiconductor laser device capable of being operated below zero DEG C by integral refrigeration

The invention discloses a semiconductor laser device capable of being operated below zero DEG C by integral refrigeration and relates to the technical field of semiconductor laser devices. The device is mainly structurally characterized in that a first semiconductor refrigeration chip and a second semiconductor refrigeration chip arranged on a water block in parallel as well as a laser tube base; a semiconductor laser tube is arranged in a middle hole of the left side wall of the laser tube base, and a grating base is arranged on the laser tube base; a grating is arranged on the left side face of the grating base; a rubber hose is arranged in a middle hole of the right side wall of a right laser shell, and the right end of the rubber hose is connected with a nitrogen gas cylinder. The basic mechanical structure of the normal-temperature semiconductor laser device is unchanged, the laser device can be operated at the low temperature normally by means of integral refrigeration, water-cooling heat dissipation and dry gas feeding, and operating wavelength of the semiconductor laser tube moves by 5nm, and feasibility is high.