Data write-in method, memorizer control circuit unit and memorizer storage device

The invention provides a data write-in method for a rewritable non-volatile memory module, a memorizer control circuit unit adopting the method and a memorizer storage device adopting the method. The rewritable non-volatile memory module comprises multiple solid erasing units. The data write-in method comprises the steps that the solid erasing units are at least divided into a data area, a backup area and an idle area, and a garbage recovery threshold value is set by adding a preset value to the lowest threshold value; the solid erasing units are extracted from solid erasing units of the idle area, and data are written into the extracted solid erasing units; the extracted solid erasing units are related to the backup area, and the garbage recovery threshold value is adjusted according to the number of the solid erasing units of the backup area and the lowest threshold value.