Bonding wire for semiconductor device and manufacturing method therefor

The present invention relates to a bonding wire for a semiconductor device and a manufacturing method therefor and, more particularly, to a method for manufacturing a bonding wire for a semiconductor device, comprising the steps of: forming a first coating layer having a second metal as a main compo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KIM SEUNG-HYOUN, KIM SANG-YEOB, MOON JEONG-TAK, HONG SUNG-JAE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	The present invention relates to a bonding wire for a semiconductor device and a manufacturing method therefor and, more particularly, to a method for manufacturing a bonding wire for a semiconductor device, comprising the steps of: forming a first coating layer having a second metal as a main component on a core material having a first metal as a main component; wire-drawing the core material on which the first coating layer is formed; and forming a second coating layer having a third metal as a main component on the core material and the first coating layer for which the wire drawing has been completed. When a bonding wire and a manufacturing method therefor of the present invention are used, damage to a chip can be reduced while preventing the exposure of the core material, and the acid resistance and bonding properties of a second side can be improved.