Semiconductor manufacturing method

The invention provides a semiconductor manufacturing method comprising the following steps: A, providing a substrate and forming a guard ring in a terminal region on the front side of the substrate; and B, performing active region photo-etching on the front side of the substrate to form a stop ring etching region. The semiconductor manufacturing method is characterized by further comprising the following steps: C, performing N+ surface implantation in the stop ring etching region to form a stop ring; D, forming a trench in an active region on the front side of the substrate, depositing polycrystalline silicon, and performing P-body implantation; E, performing N+ well photo-etching, implantation and annealing to form an N+ emitter; and F, performing a front-side metal process and a backside metal process. By adopting the technical scheme of the invention, a real stop ring can be formed on the basis of without increasing the layout, the widening of the outermost guard ring can be effectively limited, and the stop ring really plays a role.