Thin film transistor electrical feature measurement method

The invention discloses a thin film transistor electrical feature measurement method. The method comprises steps: laser is used for cutting a data line adjacent to a source of the thin film transistor in a to-be-detected pixel on a display panel and a gate line adjacent to a gate of the thin film transistor in the to-be-detected pixel; a first test element group probe and a second test element group probe are used for respectively pricking cutting sections of the data line and the gate line, and a third test element group probe pricks a drain of the thin film transistor in the to-be-detected pixel; and through applying needed voltage to the first test element group probe, the second test element group probe or the third test element group probe, electrical features of the thin film transistor are measured. By adopting the measurement method of the invention, electrical features of the thin film transistor (TFT) in the pixel in the panel can be accurately presented, and abnormity of the thin film transistor itself can be accurately positioned.