Manufacturing method of silicon film on diamond surface by vacuum ion plating

The invention relates to the technical field of diamond surface treatment, particularly a manufacturing method of a silicon film on a diamond surface by vacuum ion plating. The method comprises the following steps: a. putting diamond in a plating chamber of a vacuum ion plating machine, vacuumizing the plating chamber to 2*10Pa, and carrying out cleaning treatment on the diamond for 30 minutes by using a 5KV ion source; b. by using a silicon chip as a target cathode of the vacuum ion plating machine, and regulating the parameters of the vacuum ion plating machine as follows: the voltage is 350-450V, the direct current is 1.0-1.2A, the deflecting voltage is 100-200V, the high-purity argon flow rate is 10-14mm/second, and the temperature is 280-320 DEG C; and enabling the diamond to be in a motion-overturn-motion state, thereby producing the silicon-film-plated diamond. The method has the advantage of simple technique. The produced silicon-film-plated diamond has the advantages of high compactness.