Testing method for analyzing metal contamination in silicon wafers

The invention provides a testing method for analyzing metal contamination in silicon wafers. The testing method comprises the following steps that 1, the silicon wafers are washed to remove particles and metal on the surfaces of the silicon wafers, and then the silicon wafers are arranged in a furnace chamber of an oxidizing furnace; 2, oxide layers are made to grow on the surfaces of the silicon wafers under the mixed atmosphere of argon and oxygen at a high temperature, the growth temperature is 1000-1100 DEG C, and the thickness of the formed oxide layers is 1000-1500 angstroms; 3, a surface particle laser analyzer is used for measuring particles on the surfaces of the silicon wafers, and distribution of surface defects is analyzed; 4, a scanning electron microscope is used for analyzing a particle gathered area, defect components are tested, and qualitative judgment is carried out on contamination. According to the method, in the thermal treatment process, the oxide layers are grown on the surfaces of the silicon wafers, metal in the silicon wafers is made to diffuse to the surfaces of the silicon wafers, defect reunion formed at the interfaces of the surfaces of the silicon wafers and the oxide layers in a gathering mode, and therefore distribution of metal contamination is indirectly tested.