Lateral diffused metal oxide semiconductor field effect transistor structure and manufacturing method thereof

The invention discloses a lateral diffused metal oxide semiconductor field effect transistor structure. The structure comprises a semiconductor substrate, a drain region, light-doped drain regions, a source region and grid structures. A groove is formed in the substrate, the drain region is formed in the portion, at the bottom of the groove, of the semiconductor substrate, the light-doped drain regions are formed in the side walls of the groove, of the semiconductor substrate, the source region is formed in the semiconductor substrate, and the grid structures are formed in the portions, between the drain region and the source region and above the light-doped drain regions, of the surface of the semiconductor substrate. The invention further provides a manufacturing method of the lateral diffused metal oxide semiconductor field effect transistor structure.