Manufacturing method of silicon-based ultraviolet intensified photodiode
The invention discloses a manufacturing method of a silicon-based ultraviolet intensified photodiode. According to the manufacturing method of the silicon-based ultraviolet intensified photodiode, the silicon-based ultraviolet intensified photodiode is manufactured through a relatively simple proces...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention discloses a manufacturing method of a silicon-based ultraviolet intensified photodiode. According to the manufacturing method of the silicon-based ultraviolet intensified photodiode, the silicon-based ultraviolet intensified photodiode is manufactured through a relatively simple process and achieves device performance about the same to that of imported products. The manufacturing method of the silicon-based ultraviolet intensified photodiode has the advantage that the silicon-based ultraviolet intensified photodiode is manufactured through new technology, is almost identical to the imported products in device performance and meanwhile is simple in process and low in cost. |
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