Dual-N-layer structure amorphous silicon solar cell and preparation method of dual-N-layer structure amorphous silicon solar cell

The invention discloses a dual-N-layer structure amorphous silicon solar cell. The dual-N-layer structure amorphous silicon solar cell comprises a glass substrate, a transparent conducting film, a P-type amorphous silicon layer, a buffer layer, an amorphous silicon intrinsic layer i layer, a dual-la...

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Bibliographische Detailangaben
Hauptverfasser: PENG QIANG, RONG QIKUN, LIN ZHENXUAN, LI RUOPENG, GAO JINWEI, HAN BING
Format: Patent
Sprache:eng
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Zusammenfassung:The invention discloses a dual-N-layer structure amorphous silicon solar cell. The dual-N-layer structure amorphous silicon solar cell comprises a glass substrate, a transparent conducting film, a P-type amorphous silicon layer, a buffer layer, an amorphous silicon intrinsic layer i layer, a dual-layer N type amorphous silicon layer, a back reflecting layer and a back electrode, which are arranged on the glass substrate in sequence; the dual-layer N type amorphous silicon layer is composed of a light-doped N type amorphous silicon layer and a heavy-doped N type amorphous silicon layer; the dual-N-layer structure amorphous silicon solar cell has higher current density and photoelectric conversion efficiency. The invention also discloses a preparation method of the dual-N-layer structure amorphous silicon solar cell; the preparation method has the advantages that the process is concise, and the investment on new equipment is not needed.