Data writing method, memory control circuit unit and memory storage device

The invention discloses a data writing method used for a re-writable nonvolatile memory module, a memory control circuit unit and a memory storage device, wherein the re-writable nonvolatile memory module comprises a plurality of entity erasing units. The data writing method includes that at least grouping the entity erasing units into a data zone and a leisure zone; configuring a plurality of logic units to map the entity erasing units of the data zone; dynamically keeping a certain number of entity erasing units for being exclusively used in writing ordinal data. The data writing method is capable of quickly writing ordinal data under a management mechanism based on pages.